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2SK3113B Dataheets PDF



Part Number 2SK3113B
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet 2SK3113B Datasheet2SK3113B Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating : ±30.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK3113B-S15-AY Note Note Note Note LEAD PLATING PACKING Tube 70 p/tube PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g 2SK3113B(1)-S27-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY Pure Sn (Tin) Tube 75 p/tube Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) 600 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 V V A A W W °C °C A mJ (TO-252) ±30 ±2.0 ±8.0 20 1.0 150 –55 to +150 2.0 2.7 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 PT2 Tch Tstg IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18061EJ3V0DS00 (3rd edition) Date Published June 2007 NS Printed in Japan 2006 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2SK3113B ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS = 10 V RG = 10 Ω RL = 10 Ω VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/μs MIN. TYP. MAX. 100 ±10 UNIT μA μA V S 2.5 0.5 0.9 3.2 290 75 7 10.5 4.8 15.8 10.5 7.9 2.7 3.2 0.8 190 500 3.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 4.4 Ω pF pF pF ns ns ns ns nC nC nC V ns nC VF(S-D) trr Qrr Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% ID Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS VGS Wave Form 50 Ω RG 0 10% VGS 90% VDD ID 90% 90% IAS ID VDD ID 0 10% 10% td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet D18061EJ3V0DS 2SK3113B TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 100 40 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 Tc = 25°C, Single pulse ID(pulse) PW = 10 μs 100 μs ID - Drain Current - A 10 ID(DC) 1 ms 1 RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited 10 ms 0.1 0.01 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W Rth(ch-A) = 125°C/W 100 Rth(ch-C) = 6.25°C/W 10 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width – s Data Sheet D18061EJ3V0DS 3 2SK3113B DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 5 4.5 Pulsed VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 8V FORWARD TRANSFER CHARACTERISTICS 100 ID - Drain Current - A ID - Drain Current - A 10 1 Tch = 125°C 75°C 25°C −25°C VDS = 10 V Pulsed 20 25 30 0.1 0.01 0 5 10 15 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 5 FORWARD TRANSFER ADMITTANCE vs.


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