Document
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings ORDERING INFORMATION
PART NUMBER 2SK3113B-S15-AY
Note Note Note Note
LEAD PLATING
PACKING Tube 70 p/tube
PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g
2SK3113B(1)-S27-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY
Pure Sn (Tin)
Tube 75 p/tube Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-251)
600
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
V V A A W W °C °C A mJ (TO-252)
±30 ±2.0 ±8.0 20 1.0 150 –55 to +150 2.0 2.7
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
PT2 Tch Tstg IAS EAS
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18061EJ3V0DS00 (3rd edition) Date Published June 2007 NS Printed in Japan
2006
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2SK3113B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS = 10 V RG = 10 Ω RL = 10 Ω VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/μs
MIN.
TYP.
MAX. 100 ±10
UNIT
μA μA
V S
2.5 0.5 0.9 3.2 290 75 7 10.5 4.8 15.8 10.5 7.9 2.7 3.2 0.8 190 500
3.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
4.4
Ω pF pF pF ns ns ns ns nC nC nC V ns nC
VF(S-D) trr Qrr
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50 Ω
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 Ω RL VDD
PG.
2
Data Sheet D18061EJ3V0DS
2SK3113B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
100
40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W
35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C
80
60
40
20
0 0
20
40 60 80 100 120 140 160 Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
Tc = 25°C, Single pulse ID(pulse) PW = 10 μs
100 μs
ID - Drain Current - A
10
ID(DC)
1 ms
1
RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited
10 ms
0.1
0.01 1 10 100 1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
Rth(ch-A) = 125°C/W 100 Rth(ch-C) = 6.25°C/W
10
1
0.1 Single pulse 0.01
100 μ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width – s
Data Sheet D18061EJ3V0DS
3
2SK3113B
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
5 4.5 Pulsed VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 8V
FORWARD TRANSFER CHARACTERISTICS
100
ID - Drain Current - A
ID - Drain Current - A
10
1
Tch = 125°C 75°C 25°C −25°C VDS = 10 V Pulsed 20 25 30
0.1
0.01 0 5 10 15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
5
FORWARD TRANSFER ADMITTANCE vs.