G8551S

www.DataSheet4U.com ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8551S Description Features P N P E P I TA X I A L S I L I C O N T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier for portable radio and general purpose applications. *Collector current up to 700mA *Collector –Emitter voltage up to 20V *Complimentary to G8051S Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 Parameter ,unless otherwise specified) Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Junction Temperature Storage Temperature Range Total Power Dissipation VCBO VCEO VEBO IC Tj TsTG PD Typ. 100 10 ,unless otherwise specified) Max. Unit V V V -1 uA 500 -0.5 V -1 V -1.0 V MHz pF -25 -20 -5 -0.7 +150 -55 ~ +150 625 Test Conditions IC=-10uA,IE=0 IC=-1mA,IB=0 IE=-10uA,IC=0 VCB=-20V, IE=0 VCE=-1V,IC=-150mA VCE=-1V,IC=-500mA lC=-500mA,IB=-50mA VCE=-1V,IC=-150mA VCE=-1V,IC=-10mA VCE=-10V,Ic=-20Ma, f=100MHz VCB=-10V, IE=0A,f=1MHz V V V A mW Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(sat) VBE(on) VBE fT Cob Min. -25 -20 -5 100 150 - Clas...