G6718

www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : G6718 Description Features NP N EP ITAXI AL PL ANAR T RANSI STOR The G6718 is designed for general purpose medium power amplifier and switching applications. High Power: 850mW High Current: 1A Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PD TJ Tstg Ratings 100 100 5 1 2 200 850 150 -55 ~ +150 Unit V V V A A mA mW Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 100 5 80 50 20 50 Typ. - unless otherwise noted) Max. 100 350 300 20 MHz pF Unit V V V nA mV IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=80V, IE=0 IC=350mA, IB=35mA VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=1V, IC=500mA VCE=10V, IE=50mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE2 Rank Range A 50 ~ 115 B 95 ~ 300 1/2 ISSUED DATE :2005/09/05 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in ...