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G3401 Dataheets PDF



Part Number G3401
Manufacturers GTM
Logo GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet G3401 DatasheetG3401 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product CORPORATION G3401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2006/08/31 REVISED DATE : BVDSS RDS(ON) ID -30V 50m -4.2A Description The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3401 is universally used for all commercial-industrial applications. *Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F .

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www.DataSheet4U.com Pb Free Plating Product CORPORATION G3401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2006/08/31 REVISED DATE : BVDSS RDS(ON) ID -30V 50m -4.2A Description The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3401 is universally used for all commercial-industrial applications. *Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 ±12 -4.2 -3.5 -30 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W G3401 Page: 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) ISSUED DATE :2006/08/31 REVISED DATE : unless otherwise specified) Min. -30 -0.7 Typ. 11 9.4 2 3 6.3 3.2 38.2 12 954 115 77 6 Max. -1.3 ±100 -1 -5 50 65 120 pF ns nC m Unit V V S nA uA uA Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VGS= ±12V VDS=-24V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-1.0A ID=-4A VDS=-15V VGS=-4.5V VDS=-15V VGS=-10V RG=6 RL=3.6 VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance RDS(ON) - Total Gate Charge 2 Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD 2 - Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Parameter Forward On Voltage 2 Min. - Typ. 20.2 11.2 - Max. -1.0 -2.2 Unit V ns nC A Test Conditions IS=-1.0A, VGS=0V IS=-4A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=-1.0V Reverse Recovery Time Trr Qrr IS Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. G3401 Page: 2/4 CORPORATION Characteristics Curve ISSUED DATE :2006/08/31 REVISED DATE : Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 4. On-Resistance v.s. Junction.


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