G3400

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/14 REVISED DATE : G3400 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 28m 5.8A The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3400 is universally used for all commercial-industrial applications. Description * Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±12 5.8 4.9 30 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W G3400 Page: 1/4 ISSUED DATE :2006/08/14 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) unless otherwise specified) Min. 30 0.7 Typ. 15 9.7 1.6 3.1 3.3 4.8 26.3 4.1 8...