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LNA2606L Dataheets PDF



Part Number LNA2606L
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description GaAlAs on GaAs Infrared Light Emitting Diode
Datasheet LNA2606L DatasheetLNA2606L Datasheet (PDF)

Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm 0.8 max. For optical control systems s Features • High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature, thin side-view type package • Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.1 Not soldered 2.15 max. 1.1 2− 0.5±0.15 0.3±0.15 s Absolute Maximum Ratings Ta = 25.

  LNA2606L   LNA2606L



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Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm 0.8 max. For optical control systems s Features • High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature, thin side-view type package • Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.1 Not soldered 2.15 max. 1.1 2− 0.5±0.15 0.3±0.15 s Absolute Maximum Ratings Ta = 25°C Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2 1 2.54 Symbol PD IF IFP VR Topr Tstg Ratings 80 50 1 3 −25 to +85 −40 to +100 Unit mW mA A V °C °C 1: Anode 2: Cathode Note) *: f = 100 Hz, Duty Cycle = 0.1% s Electro-Optical Characteristics Ta = 25°C Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 3 V VR = 0 V, f = 1 MHz The angle in which radiant intencity is 50% 35 20 Conditions min 9 940 50 1.3 1.6 10 typ max 19 Unit mW nm nm V µA pF ° 1 .


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