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LNA2603F

Panasonic Semiconductor
Part Number LNA2603F
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical...
Datasheet PDF File LNA2603F PDF File

LNA2603F
LNA2603F

Overview
Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.
8 max.
For optical control systems 1.
5±0.
2 Features High-power output, high-efficiency : PO = 6 mW (typ.
) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.
) Long lifetime, high reliability Thin side-view type package 3.
9±0.
25 4.
5±0.
15 3.
5±0.
15 2.
1±0.
15 1.
6±0.
15 0.
8±0.
1 12.
8 min.
(2.
95) 2-1.
2±0.
3 2-0.
45±0.
15 0.
45±0.
15 1 2.
54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.
5 3 –25 to +8...


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