STF3NK80Z

STF3NK80Z Datasheet N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package Features 3 2 1 TO-220FP D(2) Order code VDS STF3NK80Z 800 V 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A G(1) Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) AM15572v1_no_tab using the SuperMESH technology by STMicroelectronics, an optimization of the well- established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STF3NK80Z Product summary Order code STF3NK80Z Marking F3NK80Z Package TO-220FP Packing Tube DS14366 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STF3NK80Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(1)(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s...