STK12N06L

www.DataSheet4U.com STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK12N05L STK12N06L s s s s s s s V DSS 50 V 60 V R DS( on) < 0.15 Ω < 0.15 Ω ID 12 A 12 A s TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 SOT-82 SOT-194 (option) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STK12N05L VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value STK12N06L 60 60 ± 15 12 8 48 50 0.33 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C C () Pulse width limited by safe operating area November 1996 1/10 STK12N05L/STK12N06L THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead...