IS61LV25616L

www.DataSheet4U.com IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES High-speed access time: — 10, 12, and 15 ns Low Active Power — Less than 90mA (typ.) Active Current Low standby power: — Less than 1 mA (typ.) CMOS standby TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available ISSI ® JUNE 2002 DESCRIPTION The ISSI IS61LV25616L is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV25616L is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm). FUNCTIONAL BLOCK DIAGRAM A0-A17 DECODER 256K x 16 MEMORY ARRAY VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB L...