G2U9972

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U9972 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 18m 60A The G2U9972 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Lower Gate Charge Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 IAR Tj, Tstg Ratings 60 25 60 38 230 89 0.7 30 -55 ~ +150 Unit V V A A A W W/ A Total Power Dissipation Linear Derating Factor Avalanche Current 2 Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.4 62 Unit /W /W G2U9972 Page: 1/4 ISSUED DATE :2005/07/05 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise sp...