G2N7002K

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 2 640mA The G2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2N7002K is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 60 20 640 500 950 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 60 1.0 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 3.0 10 1 100 2 4 1.6 50 pF ns nC Unit V V/ V...