G2N7000

www.DataSheet4U.com ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F G2N7000 Description N-CHANNEL ENHANCEMENT MODE MOSFET The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage -Continuous -Non-repetitive (tp 50us) Drain Current -Continuous - Pulsed Power Dissipation Ta=25 Derate above 25 Symbol Ratings -55 ~ +150 60 ±20 ±40 200 500 0.35 2.8 357 300 V V V mA W mW/ /W Unit Tj, Tstg VDSS VGS VGSM ID IDM PD R JA Thermal Resistance ,Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes,1/16” from case for 10 seconds TL Electrical Characteristics (Tc= 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source on-State Resistance Drain-Source on-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol unless otherwise noted) Min. 60 0.8 75 100 Typ. Max. 3.0 ±100 1 5.0 6.0 2.5 0.45 60 25 5 pF V mS Unit V V nA uA mA Test Conditions V(BR)DSS VGS(th...