P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/03/21 REVISED DATE :
G2305A
P-CHANNEL ENHANCEMENT MODE P...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/21 REVISED DATE :
G2305A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -3.2A
The G2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Small Package Outline
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings -30 12 -3.2 -2.6 -10 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W
1/4
ISSUED DATE :2005/03/21 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -30 -0.5 Typ. -0.1 9 10 1.8 3.6 7 15 21 15 735 100 80 Max. -1.2 100 -1 -25 60 80 150 250 18 1325 pF ns nC m...
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