G2304

www.DataSheet4U.com Pb Free Plating Product CORPORATION G2304 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID 25V 117m 2.7A The G2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Description Features Applications Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current , [email protected] 3 Continuous Drain Current , [email protected] Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 25 20 2.7 2.2 10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B Unless otherwise specified) Min. 25 1.0 Typ. 0.1 3.4 5.9 0.8 2.1 4.5 11.5 12 3 110 85 39 Max. 3.0 100 1 10 11...