N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B
G138K
N-CHANNEL ENHANCEM...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B
G138K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
50V 2 640mA
The G138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G138K is universally used for all commercial-industrial applications.
Description
Features
*Simple Drive Requirement *Small Package Outline *RoHS Compliant
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 50 20 640 500 950 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V mA mA mA W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
1/4
ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 50 0.5 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 2.0 10 1 100 2 4 1.6 50 pF ns nC Unit V V/ V mS uA uA...
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