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NTE359 Dataheets PDF



Part Number NTE359
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor RF & Microwave Transistor
Datasheet NTE359 DatasheetNTE359 Datasheet (PDF)

www.DataSheet4U.com NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector−Base Voltag.

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www.DataSheet4U.com NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter−Base Voltage, Veb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Device Dissipation @ 25°C, Pd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to °C +200 Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to °C +200 Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Off Characteristics Collector−Emitter Breakdown Voltage Collector−Emitter Sustaining Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current On Characteristics DC Current Gain Hfe IC = 200mA, VCE = 5.0V − 5 − − V(Br)CEO IC = 200mA, IB = 0, Note 1 V(Br)CES IC = 200mA, VBE = 0 V(Br)ebo IE = 10mA, IC = 0 ICBO VCB = 30 V, IE = 0 − − − − 35 65 4 1 − − − − V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH inductor Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Dynamic Characteristics Output Capacitance Common−Emitter Amplifier Power Gain Collector Efficiency Cob Gpe η VCB = 30V, IE = 0, f = .1 to 1MHz POUT = 20W, VCE = 28V, f = 175MHz − 8.2 − 22 − 60 35 − − pF dB − Symbol Test Conditions Min Typ Max Unit 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8−32−NC−3A .750 (19.05) Wrench Flat .


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