HEXFET POWER MOSFET
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PD- 96091
IRLR024PbF IRLU024PbF
HEXFET® Power MOSFET
Lead-Free
Description
Absolute Maximum Ra...
Description
www.DataSheet4U.com
PD- 96091
IRLR024PbF IRLU024PbF
HEXFET® Power MOSFET
Lead-Free
Description
Absolute Maximum Ratings
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1
08/01/06
IRLR/U024PbF
2
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IRLR/U024PbF
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3
IRLR/U024PbF
4
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IRLR/U024PbF
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5
IRLR/U024PbF
6
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IRLR/U024PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
+ +
-
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS
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7
IRLR/U024PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
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