GTT6301K

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GTT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 1 640mA The GTT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT6301K is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±16 640 500 950 1.2 0.01 -55 ~ +150 Value 110 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GTT6301K Page: 1/4 ISSUED DATE :2006/01/09 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 30 0.5 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 1.5 ±10 1 100 1 2 3...