www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/10/31 REVISED DATE :
GTT3434
N-CHANNEL ENHANCEMENT MODE ...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/10/31 REVISED DATE :
GTT3434
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 34m 6.1A
The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Description
Features
* Low on-resistance *Capable of 2.5V gate drive
Package Dimensions
REF. A A1 A2 c D E E1
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,
[email protected] Continuous Drain Current ,
[email protected] Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 30 ±12 6.1 4.9 30 1.14 0.01 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-a
Value 110
Unit /W
GTT3434
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ISSUED DATE :2006/10/31 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
unless otherwise specified)
Min. 30 0.6 Typ...