GM1213

www.DataSheet4U.com ISSUED DATE :2003/05/07 REVISED DATE :2004/12/14B GM1213 Description Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR The GM1213 is designed for using in power amplifier applications or power switching applications. SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Unit V V V A A mW mW 2 Absolute Maximum Ratings Ta=25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current at Base current Collector Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PC(Note 1) Ratings +150 -55 ~ +150 -50 -50 -5 -2 -0.4 500 1000 Typ. 120 40 0.1 1.0 0.1 Max. -0.1 -0.1 240 -0.5 -1.2 Unit uA uA V V V MHz Pf s s s Characteristics at Ta = 25 Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf Min. -50 70 20 - Note 1:Mounted on ceramic substrate (250mm x0.8t) Test Conditions VCB=-50V,IE=0 VEB=-5V,Ic=0 IC=-10mA,IB =0 VCE=-2V,Ic=-0.5A VCE=-2V,Ic=-2.0A IC=-1A, IB=-0.05A IC=-1A, IB=-0.05A VCE=-2V, IC=-0.5A VCB=-10V,IE=0, f=1MHz Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Switching tim...