GaAlAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
ø2.4
2...
Description
Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
ø2.4
2.9±0.25 4.5±0.3
3.9±0.3
Features
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
12.8 min.
2.8
2.4
2-1.2±0.3
Not soldered
1.2 0.9
1.7±0.2 0.8
1.5
2-0.45±0.15 1 2.54 R1.2 2
0.45±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
R0.6
Symbol PD IF IFP
*
Ratings 180 100 1 3 –25 to+85 –30 to +100
Unit mW mA A V ˚C ˚C
1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Cutoff frequency
*
Symbol PO λP ∆λ VF IR Ct θ fC*
Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min 6
typ 10 880 50 1.5 50 40 12
max
Unit mW nm nm
1.8 10
V µA pF deg. MHz
IFP = 50mA + 10mAp-p
Frequency when modulation optical power decreases by 3dB from 1MHz.
(
PO(fCMHz) 10 log =–3 P O (1MHz)
)
1
Infrared Light Emitting Diodes
LN78
IF — Ta
120 10 2
IFP — Duty cycle
10 4
IFP — VF
tw = 10µs f = 100Hz Ta = 25˚C
IF (mA)
IFP (mA) Pulse forward current
1 10 10 2
IFP (A)
100
10 3
10
Allowa...
Similar Datasheet