Document
Infrared Light Emitting Diodes
LN77L
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package
1.0 7.65±0.2
ø5.0±0.2
25.6±1.0 5.05±0.3 1.5 (2.0)
2-0.8 max. 2-0.6±0.15
2.54 0.6±0.15 1 2 1: Anode 2: Cathode
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 190 100 1 3 –25 to +85 –30 to +100
Unit mW mA A V ˚C ˚C
tw = 10 µs, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Half-power angle Cutoff frequency
*
Symbol PO λP ∆λ VF IR θ fC*
Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V
The angle in which radiant intencity is 50%
min 10
ø6.0±0.2
Absolute Maximum Ratings (Ta = 25˚C)
typ 18 860 40 1.6 20 20
max
Not soldered 2.0 max.
Unit mW nm nm
1.9 10
V µA deg. MHz
IFP = 50mA + 10mAp-p
Frequency when modulation optical power decreases by 3dB from 1MHz
(
PO(fCMHz) 10 log =–3 P O (1MHz)
)
1
LN77L
Infrared Light Emitting Diodes
IF — Ta
120 10 2
IFP — Duty cycle
tw = 10µs Ta = 25˚C 10 4
IFP — VF
tw = 10µs f = 100Hz Ta = 25˚C
IF (mA)
IFP (mA) Pulse forward current
1 10 10 2
IFP (A)
100
10 3
10
Allowable forward current
80
Pulse forward current
10 2
60
1
10
40
10 –1
20
1
0 – 25
0
20
40
60
80
100
10 –2 10 –1
10 –1
0
1
2
3
4
5
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 2.2
VF — Ta
10
∆PO — Ta
IF = 50mA
Relative radiant power ∆PO
VF (V)
10
1.8 IF = 100mA 50mA
Forward voltage
(2) 1
1.4
Relative radiant power ∆PO
120
(1)
1
10 –1
1.0
10 –2
1
10
10 2
10 3
0.6 – 40
0
40
80
10 –1 – 40
0
40
80
Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
920 IF = 50mA 100
Spectral characteristics
IF = 50mA Ta = 25˚C
Directivity characteristics
0˚ 100 10˚ 20˚
Peak emission wavelength λP (nm)
Relative radiant Intensity (%)
900
80
80 70
Relative radiant intensity (%)
90
30˚
880
60
60 50 40
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
860
40
30 20
840
20
820 – 40
0
40
80
120
0 750
800
850
900
950
1000 1050
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
.