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LN77L Dataheets PDF



Part Number LN77L
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description GaAlAs Infrared Light Emitting Diode
Datasheet LN77L DatasheetLN77L Datasheet (PDF)

Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0.3 1.5 (2.0) 2-0.8 max. 2-0.6±0.15 2.54 0.6±0.15 1 2 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward cu.

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Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0.3 1.5 (2.0) 2-0.8 max. 2-0.6±0.15 2.54 0.6±0.15 1 2 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C tw = 10 µs, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Half-power angle Cutoff frequency * Symbol PO λP ∆λ VF IR θ fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V The angle in which radiant intencity is 50% min 10 ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) typ 18 860 40 1.6 20 20 max Not soldered 2.0 max. Unit mW nm nm 1.9 10 V µA deg. MHz IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz ( PO(fCMHz) 10 log =–3 P O (1MHz) ) 1 LN77L Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 10 2 60 1 10 40 10 –1 20 1 0 – 25 0 20 40 60 80 100 10 –2 10 –1 10 –1 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 2.2 VF — Ta 10 ∆PO — Ta IF = 50mA Relative radiant power ∆PO VF (V) 10 1.8 IF = 100mA 50mA Forward voltage (2) 1 1.4 Relative radiant power ∆PO 120 (1) 1 10 –1 1.0 10 –2 1 10 10 2 10 3 0.6 – 40 0 40 80 10 –1 – 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 10˚ 20˚ Peak emission wavelength λP (nm) Relative radiant Intensity (%) 900 80 80 70 Relative radiant intensity (%) 90 30˚ 880 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 860 40 30 20 840 20 820 – 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2 .


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