LN75X

Infrared Light Emitting Diodes LN75X GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.8 1.8 1.0 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 180 100 1 3 –25 to +85 –30 to+100 Unit mW mA A V ˚C ˚C 1 2 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Cutoff frequency * Symbol PO λP ∆λ VF IR Ct θ fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 6 typ 10 880 50 1.5 50 25 12 max Unit mW nm nm 1.8 10 V µA pF deg. MHz IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz. ( PO(fCMHz) 10 log =–3 P O (1MHz) ) 1 Infrared Light Emitting Diodes LN75X IF — Ta 120 10 2 IFP — Duty cycle 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 3 10 ...