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LN69

Panasonic Semiconductor

GaAs Infrared Light Emitting Diode

Description
Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.54 1.6 For optical control systems 5.5±0.2 1.0 15.5±1.0 1.0 4.5±0.3 ø3.6±0.2 ø3.0±0.2 Features High-power output, high-efficiency : Ie = 3.5 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors :...


Panasonic Semiconductor

LN69

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