GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max. 2-0.6±0....
Description
Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max. 2-0.6±0.15 2.54
For optical control systems Features
High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type
26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2
ø5.0±0.2
Good radiant power output linearity with respect to input current
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 160 100 1.5 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
ø6.0±0.2
Absolute Maximum Ratings (Ta = 25˚C)
2
1 1: Cathode 2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO
*
Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min 5
typ 8 950 50 1.3 35 25
max
0.6±0.15
Unit mW nm nm
λP ∆λ VF IR Ct θ
1.6 10
V µA pF deg.
*
PO Classifications Class PO (mW) R 5 to 8 S >7
1
LN66L
Infrared Light Emitting Diodes
IF — Ta
120 10 2
IFP — Duty cycle
tw = 10µs Ta = 25˚C 120
IF — VF
Ta = 25˚C 100
IF (mA)
IFP (A)
100
IF (mA) Forward curren...
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