LN66

Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO * Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 5 1.0 typ 8 950 50 1.3 35 25 max Unit mW nm nm λP ∆λ VF IR Ct θ 1.6 10 V µA pF deg. * PO Classifications Class PO (mW) R 5 to 8 S >7 1 Infrared Light Emitting Diodes LN66 IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 120 IF — VF Ta = 25˚C 100 IF (mA) IFP (A) 100 IF (mA) Forward current 10 –1 1 10 10 2 10 Allowable...