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LN65

Panasonic Semiconductor

GaAs Infrared Light Emitting Diode


Description
Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 4.5...



Panasonic Semiconductor

LN65

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