SIGC54T60R3

www.DataSheet4U.com SIGC54T60R3 IGBT Chip FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC54T60R3 VCE 600V ICn 100A Die Size 5.97 x 8.97 mm2 Package sawn on foil Ordering Code Q67050A4341-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 5.97 x 8.97 ( 2.489 x 1.767 ) x 4 ( 2.789 x 1.995 ) x 4 1.615 x 0.817 53.6 / 40 70 150 90 245 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg 2 mm 2 Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 1, 09.06.2004 SIGC54T60R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature SC data, VGE = 15V, VCC = 360V, Tvj = 150°C 1) Symbol VC E IC Icpuls V GE Tj, Ts t g tp Value 600 1) Unit V A A V °C µs 300 ±20 ...