SIGC42T170R3

www.DataSheet4U.com SIGC42T170R3 IGBT Chip FEATURES: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC42T170R3 VCE 1700V ICn 29A Die Size 6.5 x 6.46 mm2 Package sawn on foil Ordering Code Q67050A4151-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.46 4.27 x 4.27 1.18 x 1.09 42 / 28.7 190 150 180 338 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L 7751-A, Edition 2, 04.09.03 SIGC42T170R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1700 1) Unit V A A V °C 87 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), T...