SIGC42T120CL

www.DataSheet4U.com Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180µm chip low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power module BSM25GD120DLC E3224 Applications: drives G C E Chip Type SIGC42T120CL SIGC42T120CL VCE 1200V 1200V ICn 25A 25A Die Size 6.59 x 6.49 mm2 6.59 x 6.49 mm2 Package Ordering Code C67078-A4675sawn on foil A001 C67078-A4675unsawn A002 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.49 2 x ( 2.18 x 1.58 ) 1.06 x 0.65 42.8 / 33.5 180 150 90 334 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7151-P, Edition 1, 24.01.02 Preliminary SIGC42T120CL MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol VCE IC Icpuls VGE Tj, Tstg Value 1200 25 50 ±20 -55 ... +150 Unit V A A V °C STATIC CHARAC...