SIGC32T120R3L

www.DataSheet4U.com SIGC32T120R3L IGBT Chip FEATURES: 1200V Trench + Field Stop technology 120µm chip low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC32T120R3L VCE 1200V ICn 25A Die Size 6.5 x 4.87 mm2 Package sawn on foil Ordering Code Q67050A4206-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 4.87 3.4 x 4.99 1.14 x 1.14 31.6 / 21.5 120 150 180 454 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L7641B, Edition 2, 04.09.03 SIGC32T120R3L MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 75 ±20 -55 ... +150 depending on thermal properties of assembly STAT...