LN55

Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 75 50 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1 R1.75 2.54 Not soldered ø3.5±0.2 4.2±0.3 2.3 1.9 1.2 2 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.8 typ 3.5 950 50 max Unit mW nm nm 1.5 10 50 35 V µA pF deg. IF — Ta 60 10 2 IFP — Duty cycle 80 Ta = 25˚C 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 10 –1 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 1 30 10 –1 20 10 10 –2 0 – 25 0 20 40 60...