IGBT
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SIGC28T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off l...
Description
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SIGC28T60
IGBT Chip
FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling
3
This chip is used for: power module discrete components Applications: drives
C
G
E
Chip Type SIGC28T60
VCE 600V
ICn 50A
Die Size 6.57 x 4.2 mm2
Package sawn on foil
Ordering Code Q67050A4337-A101
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 6.57 x 4.2 2.166 x 3.401 2.432 x 3.401 0.817 x 1.52 27.6 / 20 70 150 90 457 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg
2
mm
2
Edited by INFINEON Technologies AI PS DD CLS, L7561A, Edition 2, 27.01.2005
SIGC28T60
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj= 25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature SC data, VGE = 15V, VCC = 360V
1)
Symbol VC E IC Icpuls V GE Tj, Ts t g Tvj = 150°C Tvj = 25°C tp
Value 600
1)
Unit V A A V °C µs
15...
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