DatasheetsPDF.com

SIGC25T120CS2 Dataheets PDF



Part Number SIGC25T120CS2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC25T120CS2 DatasheetSIGC25T120CS2 Datasheet (PDF)

www.DataSheet4U.com Preliminary SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC25T120CS2 VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package sawn on foil Ordering Code Q67050-A4197 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad s.

  SIGC25T120CS2   SIGC25T120CS2


Document
www.DataSheet4U.com Preliminary SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC25T120CS2 VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package sawn on foil Ordering Code Q67050-A4197 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2x (2.18 x 1.6) 1.09 x 0.68 25.9 / 18.7 175 150 270 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02 Preliminary SIGC25T120CS2 MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol VCE IC Icpuls VGE Tj, Tstg Value 1200 15 30 ±20 -55 ... +150 Unit V A A V °C STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions min. VGE=0V , IC=1.5mA VGE=15V, IC=15A IC=0.6mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=30V 1200 2.7 4.5 3.2 5.5 3.7 6.5 100 120 µA nA V typ. max. Unit ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ciss Coss Crss Conditions VCE=25V, VGE=0V, f=1MHz Value min. typ. 1000 150 70 max. Unit pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time Symbol td(on) tr td(off) tf Conditions Tj=125°C V C C =600V, IC=15A, VGE=-15/15V, RG= 33Ω Value min. typ. tbd tbd tbd tbd max. Unit ns Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02 Preliminary SIGC25T120CS2 CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02 Preliminary SIGC25T120CS2 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld tbd Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02 .


SIGC25T120CS SIGC25T120CS2 SIGC25T60NC


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)