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Preliminary
SIGC25T120CS2
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications
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Chip Type SIGC25T120CS2
VCE 1200V
ICn 15A
Die Size 5.71 x 4.53 mm2
Package sawn on foil
Ordering Code Q67050-A4197
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2x (2.18 x 1.6) 1.09 x 0.68 25.9 / 18.7 175 150 270 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm
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Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02
Preliminary
SIGC25T120CS2
MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol VCE IC Icpuls VGE Tj, Tstg Value 1200 15 30 ±20 -55 ... +150 Unit V A A V °C
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions min. VGE=0V , IC=1.5mA VGE=15V, IC=15A IC=0.6mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=30V 1200 2.7 4.5 3.2 5.5 3.7 6.5 100 120 µA nA V typ. max. Unit
ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ciss Coss Crss Conditions VCE=25V, VGE=0V, f=1MHz Value min. typ. 1000 150 70 max. Unit pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time Symbol td(on) tr td(off) tf Conditions Tj=125°C V C C =600V, IC=15A, VGE=-15/15V, RG= 33Ω Value min. typ. tbd tbd tbd tbd max. Unit ns
Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02
Preliminary
SIGC25T120CS2
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02
Preliminary
SIGC25T120CS2
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the device data sheet
DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
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Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 1, 24.01.02
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