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SIGC20T120
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC20T120
VCE 1200V
ICn 15A
Die Size 4.41 x 4.47 mm2
Package sawn on foil
Ordering Code Q67050A4103-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.41 x 4.47 2.995 x 2.901 1.107 x 0.702 19.7 / 12.8 140 150 0 748 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd
2
mm
Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003
SIGC20T120
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature
1)
Symbol V CE IC Icpuls V GE Tj, Ts t g
Value 1200
1)
Unit V A A V °C
45 ±20 -55 ... +150
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions VGE=0V , IC= 0.5mA VGE=15V, IC =15A IC =600µA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V -Value min. 1200 1.4 5.0 1.7 5.8 2.1 6.5 2.16 120 µA nA Ω V typ. max. Unit
ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ci s s Co s s Cr s s Conditions V C E= 2 5 V , V GE= 0 V , f =1MHz Value min. typ. 1090 58 48 max. Unit pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time
1)
Symbol t d(on) tr td(off) tf
Conditions Tj= 1 2 5 ° C V C C =600V, IC=15A, V GE= - 1 5 / 1 5 V , RG = 7 5Ω
1)
Value min. typ. 90 45 520 90 max.
Unit ns
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003
SIGC20T120
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003
SIGC20T120
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the device data sheet
tbd
DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-S.