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SIGC20T120 Dataheets PDF



Part Number SIGC20T120
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC20T120 DatasheetSIGC20T120 Datasheet (PDF)

www.DataSheet4U.com SIGC20T120 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC20T120 VCE 1200V ICn 15A Die Size 4.41 x 4.47 mm2 Package sawn on foil Ordering Code Q67050A4103-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat posi.

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www.DataSheet4U.com SIGC20T120 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC20T120 VCE 1200V ICn 15A Die Size 4.41 x 4.47 mm2 Package sawn on foil Ordering Code Q67050A4103-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.41 x 4.47 2.995 x 2.901 1.107 x 0.702 19.7 / 12.8 140 150 0 748 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003 SIGC20T120 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 45 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions VGE=0V , IC= 0.5mA VGE=15V, IC =15A IC =600µA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V -Value min. 1200 1.4 5.0 1.7 5.8 2.1 6.5 2.16 120 µA nA Ω V typ. max. Unit ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ci s s Co s s Cr s s Conditions V C E= 2 5 V , V GE= 0 V , f =1MHz Value min. typ. 1090 58 48 max. Unit pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) Symbol t d(on) tr td(off) tf Conditions Tj= 1 2 5 ° C V C C =600V, IC=15A, V GE= - 1 5 / 1 5 V , RG = 7 5Ω 1) Value min. typ. 90 45 520 90 max. Unit ns values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003 SIGC20T120 CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003 SIGC20T120 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet tbd DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-S.


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