IGBT
www.DataSheet4U.com
SIGC158T120R3
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • sh...
Description
www.DataSheet4U.com
SIGC158T120R3
IGBT Chip
FEATURES: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
3
This chip is used for: power module
C
Applications: drives
G
E
Chip Type SIGC158T120R3
VCE
ICn
Die Size 12.56 x 12.56 mm2
Package sawn on foil
Ordering Code Q67050A4109-A001
1200V 150A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.56 x 12.56 8x(2.646 x 5.454) 1.139 x 1.139 157.8 / 128.1 140 150 90 86 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd
2
mm
Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003
SIGC158T120R3
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature
1)
Symbol V CE IC Icpuls V GE Tj, Ts t g
Value 1200
1)
Unit V A A V °C
450 ±20 -55 ... +150
depending on thermal properties of assembly
STATIC CHARACTERIS...
Similar Datasheet
- SIGC158T120R3 IGBT - Infineon Technologies
- SIGC158T120R3E IGBT - Infineon
- SIGC158T120R3L IGBT - Infineon Technologies
- SIGC158T120R3LE IGBT - Infineon