RQK0604IGDQA
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A)
Low drive current High speed switching VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “IG“.
Preliminary Datasheet
R07DS0308EJ0300 Rev.3.0...
