RKD751KP

www.DataSheet4U.com RKD751KP Silicon Schottky Barrier Diode for Detector REJ03G1485-0200 Rev.2.00 Feb 22, 2007 Features High forward current, Low capacitance. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type) Ordering Information Part No. RKD751KP Laser Mark K Package Name MP6 Package Code PXSN0002ZB-A Pin Arrangement Cathode mark Mark K 1 2 1. Cathode 2. Anode Rev.2.00 Feb 22, 2007 page 1 of 4 RKD751KP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 −55 to +125 Unit V V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance 1 ESD-Capability * Symbol VR IR IF C  Min 3.0  35  30 Typ      Max  50  1.0  Unit V µA mA pF V Test Condition IR = 1 mA VR = 0.5 V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 pF, RL = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. Rev.2.00 Feb 22, 2007 page 2 of 4 RKD751KP Main Characteristics 10–1 10–2 Forward current IF (A) Reverse current IR (A) 10–2 Ta = 75°C 10–3 Ta = 75°C 10–3 Ta = 25°C 10–4 Ta = 25°C 10–4 10–5 10–5 0 0.1 0.2 0.3 0.4 0.5 10–6 0 Forward voltage VF (V) Fig....