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Pb Free Plating Product
ISSUED DATE :2005/11/16 REVISED DATE :
GSS9975
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 21m 7. 6A
The GSS9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Description
Features
*High Breakdown Voltage *Low On-resistance *RoHS Compliant
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5. 80 4. 80 3. 80 0° 0. 40 0. 19 6. 20 5. 00 4. 00 8° 0. 90 0. 25
REF. M H L J K G
Millimeter Min. Max.
0. 10 0. 25 0. 35 0. 49 1. 35 1. 75 0. 375 REF. 45° 1. 27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain ...