GSS4228

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B GSS4228 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 6.8A Description The GSS4228 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual N MOSFET Package Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 30 20 6.8 5.5 40 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 62.5 Unit /W GSS4228 Page: 1/4 ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 1.0 Typ. 0.03 15 9 2 6 10 9 18 6 580 150 108 Max. 3.0 100 1 25 26 40 15 930 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS...