LN52

Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1 – 1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2.54±0.25 Symbol PD IF IFP * Ratings 160 100 2 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3.5 typ 6 950 50 1.25 50 1 1 100 max Unit mW nm nm 1.6 10 V µA pF µs µs deg. 1 LN52 Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle 120 Ta = 25˚C IF — VF Ta = 25˚C 100 IF (mA) IFP (A) 100...