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RKP204KP

Renesas Technology

Silicon Epitaxial Planar Pin Diode

www.DataSheet4U.com RKP204KP Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1555-0100 Rev.1.00 Jun 28, ...


Renesas Technology

RKP204KP

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www.DataSheet4U.com RKP204KP Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1555-0100 Rev.1.00 Jun 28, 2007 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.1 Ω max) Low operation current. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type) Ordering Information Part No. RKP204KP Laser Mark S Package Name MP6 Package Code PXSN0002ZB-A Pin Arrangement Cathode mark Mark 1 S 2 1. Cathode 2. Anode REJ03G1555-0100 Rev.1.00 Jun 28, 2007 Page 1 of 4 RKP204KP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance 1 ESD-Capability * Symbol VF IR C rf — Min — — — — 100 Typ — — — — — Max 1.0 100 0.35 1.1 — Unit V nA pF Ω V Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. REJ03G1555-0100 Rev.1.00 Jun 28, 2007 Page 2 of 4 RKP204KP Main Characteristic 10−2 10−7 10−4 Reverse current IR (A) Forw...




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