DatasheetsPDF.com

RKP200KP

Renesas Technology

Silicon Epitaxial Planar Pin Diode

www.DataSheet4U.com RKP200KP Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1303-0300 Rev.3.00 Feb 21, ...


Renesas Technology

RKP200KP

File Download Download RKP200KP Datasheet


Description
www.DataSheet4U.com RKP200KP Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1303-0300 Rev.3.00 Feb 21, 2007 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type) Ordering Information Part No. RKP200KP Laser Mark 7 Package Name MP6 Package Code PXSN0002ZB-A Pin Arrangement Cathode mark Mark 1 2 1. Cathode 2. Anode Rev.3.00 Feb 21, 2007 page 1 of 4 7 RKP200KP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf — Min — — — — 100 Typ — — — — — Max 1.0 100 0.35 1.3 — Unit V nA pF Ω V Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. Rev.3.00 Feb 21, 2007 page 2 of 4 RKP200KP Main Characteristic 10−2 10−7 10−4 10−8 Reverse current IR (A) Forward current IF (A) 10−9 10−10 10 −6 10−8 10−11...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)