GaAs Infrared Light Emitting Diodes
Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
For optical control systems
LN51F
ø4.6...
Description
Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
For optical control systems
LN51F
ø4.6±0.15
Unit : mm
Glass window
12.7 min.
4.5±0.2
2-ø0.45±0.05 2.54±0.25
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package
2 0. 0± 1. 1. 0± 0. 15
3˚ 45±
2 1
ø5.75 max.
1: Cathode 2: Anode
LN51L
ø4.6±0.15 Glass lens
Unit : mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP
*
Ratings 150 100 2 5 –25 to +100 –30 to +100
Unit mW mA A V ˚C ˚C
12.7 min.
6.3±0.3
2-ø0.45±0.05 2.54±0.25
VR Topr Tstg
1. 0 0± .2
f = 100 Hz, Duty cycle = 0.1 %
5 1. 0± 0 .1
3˚ 45±
2 1
ø5.75 max.
1: Cathode 2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN51F LN51L Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 5V VR = 0V, f = 1MHz IFP = 100mA
The angle in which radiant intencity is 5...
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