LN51F

Infrared Light Emitting Diodes LN51F, LN51L GaAs Infrared Light Emitting Diodes For optical control systems LN51F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 Features High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± 2 1 ø5.75 max. 1: Cathode 2: Anode LN51L ø4.6±0.15 Glass lens Unit : mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 150 100 2 5 –25 to +100 –30 to +100 Unit mW mA A V ˚C ˚C 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 VR Topr Tstg 1. 0 0± .2 f = 100 Hz, Duty cycle = 0.1 % 5 1. 0± 0 .1 3˚ 45± 2 1 ø5.75 max. 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN51F LN51L Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 5V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 5...