RJK1525DPS

www.DataSheet4U.com RJK1525DPS Silicon N Channel MOS FET High Speed Power Switching REJ03G1314-0200 Rev.2.00 Feb 08, 2007 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 150 ±30 17 50 17 50 17 21.6 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.2.00 Feb 08, 2007 page 1 of 6 RJK1525DPS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reve...