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Part Number MD3S
Manufacturers Rectron Semiconductor
Logo Rectron Semiconductor
Description SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Datasheet MD3S DatasheetMD3S Datasheet (PDF)

www.DataSheet4U.com RECTRON MD1S THRU MD7S SEMICONDUCTOR TECHNICAL SPECIFICATION SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * * * Surge overload rating - 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 0.5 gram MD-S MECHANICAL DATA M D 0.028(0.9) 0.020(0.5) 0.1.

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www.DataSheet4U.com RECTRON MD1S THRU MD7S SEMICONDUCTOR TECHNICAL SPECIFICATION SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * * * Surge overload rating - 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 0.5 gram MD-S MECHANICAL DATA M D 0.028(0.9) 0.020(0.5) 0.108(2.74) 0.092(2.34) 0.193(4.9) 0.177(4.5) * Epoxy : Device has UL flammability classification 94V-0 * UL listed the recognized component directory, file #E94233 1 2 3 4 .004(0.10) MAX. 2.756(7.0) 0.260(6.6) 0.157(4.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.193(4.9) 0.177(4.5) o 0.106(2.7) 0.091(2.3) 0.014(0.35) 0.006(0.15) Dimensions in millimeters MAXIMUM RATINGS (At T A = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Rectified Current at TA = 30 oC - on glass-epoxy P.C.B. ( NOTE 1 ) - on aluminum substrate ( NOTE 2 ) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range I FSM T J, T STG 30 -55 to + 150 Amps 0 SYMBOL VRRM V RMS VDC IO MD1S 50 35 50 MD2S 100 70 100 MD3S 200 140 200 MD4S 400 280 400 0.5 0.8 MD5S 600 420 600 MD6S 800 560 800 0.157(4.0) 0.145(3.6) MD7S 1000 700 1000 UNITS Volts Volts Volts Amp ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element at 0.5A DC Maximum Reverse Current at rated DC Blocking Voltage per element @T A = 25 C @T A = 125 oC o SYMBOL VF MD1S MD2S MD3S MD4S 1.05 10 0.5 MD5S MD6S MD7S UNITS Volts uAmps mAmps 2001-4 IR NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads. 2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad. 3. Suffix “-S” Surface Mount for Mini Dip Bridge. 0.152(3.6) C RATING AND CHARACTERISTIC CURVES ( MD1S THRU MD7S ) TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) POWER DISSIPATION 2.4 2 pulse test per one diode sine wave Tj=150 C 0 POWER DISSIPATION PF(W) 1 2 1.6 0.5 TL=150 C (TYP) 0 TL=25 C (TYP) 0 1.2 0.8 0.2 0.1 0.4 0.05 0 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE RECTIFIED FORWARD CURRENT, Io (A) SURGE FORWARD CURRENT CAPABILITY 35 TYPICAL FORWARD CURRENT DERATING CURVE 1.4 PEAK FORWARD SURGE CURRENT, (A) sine wave AVERAGE FORWARD CURRENT, (A) 30 25 20 15 10 5 0 1 2 5 10 1.2 1.0 0.8 on aluminum subs.


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