HAF2012

www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 1 1 2 3 D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 1 of 9 HAF2012(L), HAF2012(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 60 16 –2.8 20 40 20 50 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics (Ta = ...