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GT50J327

silicon N-channel IGBT

Description

www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO...

Toshiba Semiconductor

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