35A AVALANCHE AUTOMOTIVE CELL DIODE
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 1...
Description
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX
C3520, C3524, C3536
35A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C35
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode
Dim Min Max A — 6.40 B — 5.46
Side, Add “R” Suffix to Indicate Reverse Polarity,
C 0.75 —
i.e. C3520R Mounting Position: Any Lead Free: For RoHS / Lead Free Version,
D 1.0 —
A E — 2.2
All Dimensions in mm
Add “-LF” Suffix to Part Number, See Page 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Output Current
@TC = 150°C
Breakdown Voltage Min. Breakdown Voltage Max.
@IR = 100mA @IR = 100mA
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Forward Voltage
@IF = 80A
Peak Reverse Current At Rated DC Blocking Voltage
@TA = 25°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Symbol VRRM VRWM VR IO VBR
IFSM
VFM IRM R JA TJ, TSTG
C3520 16
20 26
C3524
20
35 24 32
400
1.08 200 1.4 -40 to +150
C3536 32
36 42
Unit V A V
A V nA °C/W °C
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